The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2015
Filed:
Oct. 25, 2013
Shanghai Huali Microelectronics Corporation, Pudong, Shanghai, CN;
Fei Luo, Shanghai, CN;
Shanghai Huali Microelectronics Corporation, Pudong, Shanghai, CN;
Abstract
The present invention discloses a method of forming an annular storage structure of a magneto-resistive memory. It relates to the manufacturing process of the semiconductor devices. The method includes the following steps: a silicon oxide layer and a silicon nitride layer is formed on the thin-film layer of a magnetic channel junction; a circular silicon nitride trench is formed; a poly-silicon thin film is deposited to cover the silicon nitride trench, the annular poly-silicon structure is formed by plasma etching back; the remaining silicon nitride thin film is removed to form the annular poly-silicon hard mask; the poly-silicon hard mask is used when the magnetic channel junction thin film layer is etched by plasma etching. At last, the unit structure of magnetic channel junction is formed. The advantages of the above technical solutions are: the diameter of the round photo-resist pattern is larger; it is possible to use the photo-etching with normal resolution, thus the method reduces the cost of production enhances market competitiveness and obtains significant economic benefits.