The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2015
Filed:
Jan. 05, 2015
Alexei Ankoudinov, Redmond, WA (US);
Alexei Ankoudinov, Redmond, WA (US);
Other;
Abstract
Diodes and methods of manufacturing diodes are disclosed. The diodes may include a cathode assembly having a cathode electrode, a N+ substrate layer on the cathode electrode, a N buffer layer on the N+ substrate layer, and a N− bulk layer on the N buffer layer. The N buffer layer may include crystal damage configured to provide recombination centers for charge carriers. The method may include creating a N buffer layer on a N+ substrate wafer, creating a N− bulk layer on the N buffer layer, and inflicting, to the N buffer layer, crystal damage configured to provide recombination centers for charge carriers. The method may include creating a N buffer layer in a N− bulk wafer, creating a N+ substrate layer in the N− bulk wafer, and inflicting, to the N buffer layer, crystal damage configured to provide recombination centers for charge carriers.