The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2015
Filed:
Mar. 07, 2014
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Kazuhiro Matsuo, Yokkaichi, JP;
Masayuki Tanaka, Yokkaichi, JP;
Masao Shingu, Yokkaichi, JP;
Kensei Takahashi, Kuwana, JP;
Fumiki Aiso, Kuwana, JP;
KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;
Abstract
A semiconductor storage device according to the present embodiment includes a semiconductor substrate. A tunnel insulating film is provided on the semiconductor substrate. A charge accumulation layer is provided on the tunnel insulating film. An intermediate dielectric film is provided on the charge accumulation layer. A control gate electrode is formed on the intermediate dielectric film. The intermediate dielectric film includes a laminated film of silicon oxide films of multiple layers and silicon nitride films of at least one layer, and a silicon oxynitride film provided between adjacent ones of the silicon oxide films and the silicon nitride films.