The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2015
Filed:
Aug. 22, 2014
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Yuya Maeda, Kawasaki, JP;
Hajime Yamaguchi, Kawasaki, JP;
Tomomasa Ueda, Yokohama, JP;
Kentaro Miura, Kawasaki, JP;
Shintaro Nakano, Kawasaki, JP;
Nobuyoshi Saito, Oota, JP;
Tatsunori Sakano, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Abstract
According to one embodiment, a thin film transistor includes a first insulating film, a gate electrode, a semiconductor layer, a gate insulator film, a second insulating film, a source electrode, a tunneling insulating portion, and a drain electrode. The semiconductor layer is provided between the gate electrode and the first insulating film, and includes an amorphous oxide. The gate insulator film is provided between the semiconductor layer and the gate electrode. The second insulating film is provided between the semiconductor layer and the first insulating film. The tunneling insulating portion is provided between the semiconductor layer and the source electrode, and between the semiconductor layer and the drain electrode, and between the first insulating film and the second insulating film. The tunneling insulating portion includes oxygen and at least one selected from aluminum and magnesium. A thickness of the tunneling insulating portion is 2 nanometers or less.