The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 29, 2015

Filed:

Sep. 09, 2013
Applicant:

Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;

Inventors:

Yukimine Shimada, Osaka, JP;

Hirohiko Nishiki, Osaka, JP;

Kenichi Kitoh, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 21/02 (2006.01); H01L 21/441 (2006.01); H01L 29/24 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); G02F 1/1368 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 21/02609 (2013.01); H01L 21/441 (2013.01); H01L 27/124 (2013.01); H01L 27/1225 (2013.01); H01L 27/1259 (2013.01); H01L 29/24 (2013.01); H01L 29/41733 (2013.01); H01L 29/66969 (2013.01); H01L 29/78606 (2013.01); G02F 1/1368 (2013.01); G02F 2201/50 (2013.01); H01L 23/53223 (2013.01); H01L 2924/0002 (2013.01);
Abstract

This semiconductor device () includes: a substrate (); a thin-film transistor () which includes an oxide semiconductor layer () as its active layer; a protective layer () covering the thin-film transistor; a metal layer () interposed between the protective layer () and the substrate (); a transparent conductive layer () formed on the protective layer (); and a connecting portion () to electrically connect the metal layer () and the transparent conductive layer () together. The connecting portion () includes an oxide connecting layer () which is formed out of a same oxide film as a oxide semiconductor layer () and which has a lower electrical resistance than the oxide semiconductor layer (). The metal layer () is electrically connected to the transparent conductive layer () via the oxide connecting layer ().


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