The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2015
Filed:
Feb. 15, 2015
AU Optronics Corp., Hsin-Chu, TW;
Ssu-Hui Lu, Hsin-Chu, TW;
Ming-Hsien Lee, Hsin-Chu, TW;
AU Optronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A pixel structure includes a substrate, a patterned semiconductor layer, an insulation layer, a gate electrode, a first inter-layer dielectric (ILD) layer, a second ILD layer, a third ILD layer, a source electrode and a drain electrode. The patterned semiconductor layer is disposed on the substrate. The insulation layer is disposed on the patterned semiconductor layer. The gate electrode is disposed on the insulation layer. The first ILD layer is disposed on the gate electrode, the second ILD layer is disposed on the first ILD layer, and the third ILD layer is disposed on the second ILD layer. The source electrode and the drain electrode are disposed on the third ILD layer, wherein the source electrode and the drain electrode are electrically connected to the patterned semiconductor layer via a first contact window and a second contact window respectively.