The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2015
Filed:
Apr. 07, 2011
Thomas Uhlig, Dresden, DE;
Lutz Steinbeck, Dresden, DE;
Thomas Uhlig, Dresden, DE;
Lutz Steinbeck, Dresden, DE;
X-FAB SEMICONDUCTOR FOUNDRIES AG, Erfurt, DE;
Abstract
In a semiconductor component or device, a lateral power effect transistor is produced as an LDMOS transistor in such a way that, in combination with a trench isolation region () and the heavily doped feed guiding region (A), an improved potential profile is achieved in the drain drift region () of the transistor. For this purpose, in advantageous embodiments, it is possible to use standard implantation processes of CMOS technology, without additional method steps being required.
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