The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2015
Filed:
Aug. 01, 2013
Kabushiki Kaisha Toshiba, Minato-Ku, Tokyo, JP;
Masakazu Goto, Tsukuba-Shi, JP;
Shigeru Kawanaka, Yokohama-Shi, JP;
Akira Hokazono, Kawasaki-Shi, JP;
Tatsuya Ohguro, Yokohama-Shi, JP;
Yoshiyuki Kondo, Yokohama-Shi, JP;
KABUSHIKI KAISHA TOSHIBA, Toyko, JP;
Abstract
In one embodiment, a first main terminal region of a first conductivity type and a second main terminal region of a second conductivity type, which is an opposite conductivity type of the first conductivity type, formed in the semiconductor substrate so as to sandwich a gate electrode, a diffusion layer of the second conductivity type coming in contact with the first and second element isolation insulator films and having an upper surface in a position deeper than lower surfaces of the first and second main terminal regions, a first well region of the first conductivity type formed between the first main terminal region and the diffusion layer, and a second well region of the first conductivity type formed between the second main terminal region and the diffusion layer. The second well region has a impurity concentration higher than that of the first well region.