The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2015
Filed:
Jun. 11, 2013
Applicant:
Electronics and Telecommunications Research Institute, Daejeon, KR;
Inventors:
Seong-Il Kim, Daejeon, KR;
Jong-Won Lim, Daejeon, KR;
Dong Min Kang, Daejeon, KR;
Sang-Heung Lee, Daejeon, KR;
Hyung Sup Yoon, Daejeon, KR;
Chull Won Ju, Daejeon, KR;
Byoung-Gue Min, Daejeon, KR;
Jongmin Lee, Daejeon, KR;
Jae Kyoung Mun, Daejeon, KR;
Eun Soo Nam, Daejeon, KR;
Assignee:
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE, Daejeon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/812 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 29/41 (2006.01); H01L 29/423 (2006.01); H01L 29/778 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66477 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/40 (2013.01); H01L 29/401 (2013.01); H01L 29/402 (2013.01); H01L 29/41 (2013.01); H01L 29/42312 (2013.01); H01L 29/42316 (2013.01); H01L 29/42376 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01); H01L 29/812 (2013.01);
Abstract
A field effect transistor is provided. The transistor may include a source electrode and a drain electrode provided spaced apart from each other on a substrate and a '+'-shaped gate electrode provided on a portion of the substrate located between the source and drain electrodes.