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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9224830 B1

PDFFull Text
Expired
Date of Patent:
Dec. 29, 2015

Filed:

Jun. 11, 2013

Transistor and method of fabricating the same

Applicant:

Electronics and Telecommunications Research Institute, Daejeon, KR;

Inventors:

Seong-Il Kim, Daejeon, KR;

Jong-Won Lim, Daejeon, KR;

Dong Min Kang, Daejeon, KR;

Sang-Heung Lee, Daejeon, KR;

Hyung Sup Yoon, Daejeon, KR;

Chull Won Ju, Daejeon, KR;

Byoung-Gue Min, Daejeon, KR;

Jongmin Lee, Daejeon, KR;

Jae Kyoung Mun, Daejeon, KR;

Eun Soo Nam, Daejeon, KR;

Assignee:

ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE, Daejeon, KR;

Attorney:

Rabin & Berdo, P.C.

Primary Examiner:

Fei Fei Yeung Lopez

Int. Cl.
CPC ...
H01L 29/812 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 29/41 (2006.01); H01L 29/423 (2006.01); H01L 29/778 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66477 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/40 (2013.01); H01L 29/401 (2013.01); H01L 29/402 (2013.01); H01L 29/41 (2013.01); H01L 29/42312 (2013.01); H01L 29/42316 (2013.01); H01L 29/42376 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01); H01L 29/812 (2013.01);
Abstract

A field effect transistor is provided. The transistor may include a source electrode and a drain electrode provided spaced apart from each other on a substrate and a '+'-shaped gate electrode provided on a portion of the substrate located between the source and drain electrodes.

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Kim, Seong-Il. (2015). Transistor and method of fabricating the same (U.S. Patent No. 9224830). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9224830

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