The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2015
Filed:
May. 29, 2013
Samsung Corning Advanced Glass, Llc, Chungcheongnam-do, KR;
Jinjoo Ha, ChungCheongNam-Do, KR;
Seungju Lee, ChungCheongNam-Do, KR;
Joo Hye Oh, ChungCheongNam-Do, KR;
Johann Cho, ChungCheongNam-Do, KR;
Ju Ok Park, ChungCheongNam-Do, KR;
In Sung Sohn, ChungCheongNam-Do, KR;
Hyungrok Lee, ChungCheongNam-Do, KR;
Jin Woo Han, ChungCheongNam-Do, KR;
Abstract
An oxide semiconductor sputtering target which is used for depositing a thin film having high electron mobility and high operational reliability, a method of manufacturing thin-film transistors (TFTs) using the same, and a TFT manufactured using the same. The oxide semiconductor sputtering target is used in a sputtering process for depositing an active layer on a TFT. The oxide semiconductor sputtering target is made of a material based on a composition including indium (In), tin (Sn), gallium (Ga) and oxygen (O). The method includes the step of depositing an active layer using the above-described oxide semiconductor sputtering target. The thin-film transistor may be used in a display device, such as a liquid crystal display (LCD) or an organic light-emitting display (OLED).