The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2015
Filed:
May. 17, 2013
Applicant:
The Board of Trustees of the University of Illinois, Urbana, IL (US);
Inventors:
Xiuling Li, Champaign, IL (US);
Yi Song, Urbana, IL (US);
Assignee:
The Board of Trustees of the University of Illinois, Urbana, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0673 (2013.01); H01L 29/1054 (2013.01); H01L 29/20 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/42392 (2013.01); H01L 29/7841 (2013.01); H01L 29/7869 (2013.01);
Abstract
A field effect transistor structure comprises a source and a drain on a substrate, and a stack of n vertically separated channel nanowires isolated from the substrate and connecting the source and the drain, where n is an integer and 2≦n≦20. The channel nanowires collectively comprise at least two different thicknesses and/or at least two different dopant concentrations and/or at least two different semiconductor materials.