The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2015
Filed:
Aug. 29, 2013
Applicant:
Kabushiki Kaisha Toshiba, Minato-Ku, Tokyo, JP;
Inventors:
Shusuke Kawai, Fujisawa, JP;
Toshiya Mitomo, Yokohama, JP;
Shigehito Saigusa, Yokohama, JP;
Tetsuro Itakura, Tokyo, JP;
Assignee:
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 23/522 (2006.01); H01L 23/64 (2006.01); H01L 23/66 (2006.01);
U.S. Cl.
CPC ...
H01L 28/40 (2013.01); H01L 23/5223 (2013.01); H01L 23/5225 (2013.01); H01L 23/642 (2013.01); H01L 23/66 (2013.01); H01L 28/60 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A semiconductor device includes a silicon substrate, a shield which is disposed on the silicon substrate and includes a conductive material, a capacitor electrode disposed on the shield, and at least one pillar member which is provided between the shield and the silicon substrate and includes a conductive material. The pillar member may be disposed at a location other than a location of a through-hole.