The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2015
Filed:
Nov. 05, 2012
Fujitsu Semiconductor Limited, Yokohama-shi, Kanagawa, JP;
Satoshi Torii, Kuwana, JP;
FUJITSU SEMICONDUCTOR LIMITED, Yokohama, JP;
Abstract
A method of manufacturing a semiconductor device includes: forming a conductive film on a semiconductor substrate; patterning the conductive film in a memory region to form a first gate electrode; after forming the first gate electrode, forming a mask film above each of the conductive film in a logic region and the first gate electrode; removing the mask film in the logic region; forming a first resist film above the mask film left in the memory region and above the conductive film left in the logic region; and forming a second gate electrode in the logic region by etching the conductive film using the first resist film as a mask.