The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2015
Filed:
Aug. 26, 2014
Applicant:
Denso Corporation, Kariya, Aichi-pref., JP;
Inventors:
Assignee:
DENSO CORPORATION, Kariya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 29/739 (2006.01); H01L 29/66 (2006.01); H01L 29/861 (2006.01); H01L 27/07 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0664 (2013.01); H01L 27/0722 (2013.01); H01L 29/4236 (2013.01); H01L 29/66348 (2013.01); H01L 29/7395 (2013.01); H01L 29/7397 (2013.01); H01L 29/861 (2013.01); H01L 29/0696 (2013.01);
Abstract
In a semiconductor device including an IGBT and a freewheeling diode W≧2×L1/K, where K≧2.5, W denotes a distance between the divided first regions, L1 denotes a thickness of the drift layer, k1 denotes a parameter that depends on structures of the insulated gate bipolar transistor and the freewheeling diode, and K denotes a value calculated by multiplying the parameter k1 by a ratio of a snapback voltage to a built-in potential between the deep well layer and the drift layer.