The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 29, 2015

Filed:

Jul. 06, 2012
Applicants:

Kenji Ohtsu, Aichi, JP;

Yoshiji Ohtsu, Aichi, JP;

Taku Kusunoki, Tokyo, JP;

Takeshi Araki, Tokyo, JP;

Hiroaki Tatsumi, Tokyo, JP;

Inventors:

Kenji Ohtsu, Aichi, JP;

Taku Kusunoki, Tokyo, JP;

Takeshi Araki, Tokyo, JP;

Hiroaki Tatsumi, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/14 (2006.01); H01L 23/373 (2006.01); H01L 23/498 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/14 (2013.01); H01L 23/3735 (2013.01); H01L 24/83 (2013.01); H01L 24/89 (2013.01); H01L 23/498 (2013.01); H01L 24/05 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/04026 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/29294 (2013.01); H01L 2224/29339 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/73263 (2013.01); H01L 2224/8384 (2013.01); H01L 2224/83192 (2013.01); H01L 2224/83447 (2013.01); H01L 2224/92246 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10254 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/10329 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/15747 (2013.01); H01L 2924/15787 (2013.01);
Abstract

A semiconductor device includes a circuit substrate which is configured with an insulative substrate formed of a ceramic material and provided on its one surface with an electrode formed of a copper material, and a power semiconductor element bonded with the electrode using a sinterable silver-particle bonding material, wherein the electrode has a Vickers hardness of 70 HV or more in its portion from the bonding face with the power semiconductor element toward the insulative substrate to a depth of 50 μm, and has a Vickers hardness of 50 HV or less in its portion at the side toward the insulative substrate.


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