The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 29, 2015

Filed:

Aug. 27, 2009
Applicants:

Katsumi Kishino, Tokyo, JP;

Akihiko Kikuchi, Tokyo, JP;

Hiroto Sekiguchi, Tokyo, JP;

Inventors:

Katsumi Kishino, Tokyo, JP;

Akihiko Kikuchi, Tokyo, JP;

Hiroto Sekiguchi, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/24 (2006.01); H01L 21/02 (2006.01); H01L 27/15 (2006.01); H01L 29/06 (2006.01); B82Y 20/00 (2011.01); H01L 31/0352 (2006.01); H01L 31/075 (2012.01); H01L 33/18 (2010.01); H01L 33/24 (2010.01); H01S 5/02 (2006.01); H01S 5/10 (2006.01); H01S 5/183 (2006.01); H01S 5/32 (2006.01); H01S 5/323 (2006.01); H01S 5/40 (2006.01); H01S 5/42 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0254 (2013.01); B82Y 20/00 (2013.01); H01L 21/0242 (2013.01); H01L 21/02458 (2013.01); H01L 21/02603 (2013.01); H01L 21/02639 (2013.01); H01L 27/15 (2013.01); H01L 27/153 (2013.01); H01L 29/0657 (2013.01); H01L 29/0665 (2013.01); H01L 29/0669 (2013.01); H01L 29/0676 (2013.01); H01L 31/035227 (2013.01); H01L 31/035281 (2013.01); H01L 31/075 (2013.01); H01L 33/18 (2013.01); H01L 33/24 (2013.01); H01S 5/0213 (2013.01); H01S 5/1042 (2013.01); H01S 5/183 (2013.01); H01S 5/3203 (2013.01); H01S 5/32341 (2013.01); H01S 5/4025 (2013.01); H01S 5/423 (2013.01); Y02E 10/548 (2013.01);
Abstract

The present invention provides a semiconductor optical element array including: a semiconductor substrate having a main surface in which a plurality of concave portions is formed; a mask pattern that is formed on the main surface of the semiconductor substrate and includes a plurality of opening portions provided immediately above the plurality of concave portions; a plurality of fine columnar crystals that is made of a group-III nitride semiconductor grown from the plurality of concave portions to the upper side of the mask pattern through the plurality of opening portions; an active layer that is grown on each of the plurality of fine columnar crystals; and a semiconductor layer covering each of the active layers.


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