The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2015
Filed:
Dec. 18, 2013
Pmc-sierra Us, Inc., Sunnyvale, CA (US);
Stephen Bates, Canmore, CA;
Ognjen Katic, Vancouver, CA;
PMC-Sierra US, Inc., Sunnyvale, CA (US);
Abstract
A method is disclosed for setting or modifying a threshold voltage in a NAND flash memory, using an optimization method and based on an error, such as stored in a threshold voltage table. In an embodiment, a method is provided to optimize the read voltage on a NAND flash memory in order to minimize the errors on the NAND flash memory in the fewest reads operations as possible. Advantageously, the method of the present disclosure is more reliability as the method minimizes a Raw Bit Error Rate (RBER) on the NAND flash memory. In an embodiment, a NAND controller adjusts an existing cell read threshold voltage for a selected cell, using an iterative optimization method, based on a difference between first and second error rates, or a difference between first and second probabilities, to generate an adjusted cell read threshold voltage.