The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 29, 2015

Filed:

Jun. 16, 2014
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Seunghwan Seo, Dresden, DE;

Jongsin Yun, Austin, TX (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/40 (2006.01); G11C 11/419 (2006.01); G11C 11/413 (2006.01);
U.S. Cl.
CPC ...
G11C 11/419 (2013.01); G11C 11/40 (2013.01); G11C 11/413 (2013.01);
Abstract

A circuit for providing additional current in a memory cell without a higher supply voltage is provided. Embodiments include a circuit having a six transistor static random access memory (SRAM) cell including a first inverter and second cross-coupled to a second inverter; a first transistor having a first source coupled to a first bit-line, a first drain coupled to the first inverter, and a first gate coupled to a word-line; a second transistor having a second source coupled to the second inverter, a second drain coupled to a second bit-line, and a second gate coupled to the word-line; and a plurality of bit-line sensing transistors coupled to the first transistor and to the second transistor.


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