The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2015
Filed:
Aug. 07, 2013
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Bogeun Kim, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
An operating method for a memory system including a nonvolatile random access memory (NVRAM) and a NAND flash memory includes performing a normal read operation directed to the target memory cell in response to a read request, determining that a read fail has occurred as a result of the normal read operation, then performing a read retry operation by iterations directed to the target memory cell according to a first read retry scheme until a pass read retry iteration successfully reads the target memory cell, and storing pass information associated with the pass read retry iteration in the NVRAM.