The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 29, 2015

Filed:

Aug. 08, 2014
Applicant:

Sifotonics Technologies Co., Ltd., Woburn, MA (US);

Inventors:

Changhua Chen, Beijing, CN;

Yanwu Zhang, Beijing, CN;

Dong Pan, Andover, MA (US);

Tzungi Su, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/225 (2006.01); G02F 1/21 (2006.01);
U.S. Cl.
CPC ...
G02F 1/2257 (2013.01); G02F 1/2255 (2013.01); G02F 2001/212 (2013.01); G02F 2201/122 (2013.01);
Abstract

Embodiments of the present disclosure provide a high-speed silicon modulator without the microwave mode conversion and provide 50-ohm impedance matching to drivers simultaneously. In one aspect, a device may include an input waveguide region, an optic splitter, two optic phase shifters, an optic splitter, and an output waveguide. The device may include two curved waveguides. Either or both of the curved waveguides may have specially doped regions including PN junctions or MOS capacitors. The PN junctions or MOS capacitors may be alternatively connected to both slots of a coplanar waveguide forming the electrodes.


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