The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 29, 2015

Filed:

Feb. 15, 2013
Applicant:

Olympus Ndt, Inc., Waltham, MA (US);

Inventors:

Martin St-Laurent, Quebec, CA;

Jinchi Zhang, Quebec, CA;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01B 21/18 (2006.01); G01N 29/06 (2006.01); G01N 29/44 (2006.01); G01N 29/07 (2006.01); G01N 29/11 (2006.01); G01N 29/26 (2006.01);
U.S. Cl.
CPC ...
G01N 29/0645 (2013.01); G01N 29/069 (2013.01); G01N 29/07 (2013.01); G01N 29/11 (2013.01); G01N 29/262 (2013.01); G01N 29/44 (2013.01); G01N 29/4454 (2013.01);
Abstract

Disclosed is an improved method of sizing a defect using a phased array system with a single probe orientation requiring only a simple one-pass scan. It is an improvement of the ADDT standard which is adapted to phased array systems with fixed probe orientations. Based on pre-configured parameters obtained from C-scans, the method as presently disclosed provides novel analysis on C-scans and more complete information on defects, including the orientation and sizes in length and depth or thickness of the defects. Phased array systems devised with the presently disclosed method can perform such inspection and complete sizing automatically for longitudinal, transverse and oblique defects in one pass of scan.


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