The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2015
Filed:
Jan. 07, 2014
Lockheed Martin Corporation, Bethesda, MD (US);
David R. Helms, Tyngsboro, MA (US);
Peter W. Fox, Jr., Lumberton, NJ (US);
Thomas P. Higgins, Mount Laurel, NJ (US);
William G. Trueheart, Jr., Sewell, NJ (US);
Lockheed Martin Corporation, Bethesda, MD (US);
Abstract
A two-stage RF amplifier comprising first and second transistors arranged in cascode. An input stage includes a common source transistor having a gate terminal responsive to an input signal and an output stage includes a common gate transistor having a source terminal operatively connected to the drain terminal of the common source transistor. A shunt feedback network is arranged between a drain terminal of the common gate transistor and the gate terminal of the common source transistor. A source feedback network is arranged between the source terminal of the common source transistor and a reference potential. A common gate feedback network is arranged between the drain terminal of the common gate transistor and a gate terminal of the common gate transistor. And a termination feedback network is arranged in series between the reference potential and the gate terminal of the common gate transistor.