The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 22, 2015

Filed:

May. 06, 2013
Applicant:

Fuji Xerox Co., Ltd., Minato-ku, Tokyo, JP;

Inventors:

Kazutaka Takeda, Kanagawa, JP;

Takashi Kondo, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/30 (2006.01); H04B 10/50 (2013.01); H01S 5/183 (2006.01); H01S 5/343 (2006.01); H01S 5/022 (2006.01); H01S 5/065 (2006.01); H01S 5/20 (2006.01);
U.S. Cl.
CPC ...
H01S 5/30 (2013.01); H01S 5/18313 (2013.01); H01S 5/18358 (2013.01); H01S 5/3432 (2013.01); H04B 10/503 (2013.01); H01S 5/02284 (2013.01); H01S 5/02288 (2013.01); H01S 5/0654 (2013.01); H01S 5/2009 (2013.01); H01S 2301/163 (2013.01);
Abstract

A surface emitting semiconductor laser includes: a substrate; a first semiconductor multilayer reflector on the substrate including laminated pairs of a high refractive index layer relatively high in refractive index and a low refractive index layer relatively low in refractive index; an active region on or above the first reflector; a second semiconductor multilayer reflector on or above the active region including laminated pairs of a high refractive index layer relatively high in refractive index and a low refractive index layer relatively low in refractive index; and a cavity extending region formed between the first reflector and the active region or between the second reflector and the active region, having an optical film thickness greater than an oscillation wavelength, extending a cavity length, including a conductive semiconductor material, and including an optical loss causing layer at at least one node of a standing wave of a selected longitudinal mode.


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