The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2015
Filed:
Feb. 29, 2012
Akiyoshi Watanabe, Hamamatsu, JP;
Kazuyoshi Hirose, Hamamatsu, JP;
Kousuke Shibata, Hamamatsu, JP;
Takahiro Sugiyama, Hamamatsu, JP;
Yoshitaka Kurosaka, Hamamatsu, JP;
Susumu Noda, Kyoto, JP;
Akiyoshi Watanabe, Hamamatsu, JP;
Kazuyoshi Hirose, Hamamatsu, JP;
Kousuke Shibata, Hamamatsu, JP;
Takahiro Sugiyama, Hamamatsu, JP;
Yoshitaka Kurosaka, Hamamatsu, JP;
Susumu Noda, Kyoto, JP;
Kyoto University, Kyoto-shi, Kyoto, JP;
HAMAMATSU PHOTONICS K.K., Hamamatsu-shi, Shizuoka, JP;
Abstract
The present edge-emitting semiconductor layer element includes two-dimensional photonic crystalsformed in a semiconductor layer, and when one direction of a contact region of an electrodeis provided as a length direction (X-direction) and a direction perpendicular to both of the length direction and a thickness direction of a substrate is provided as a width direction (Y-direction), the two-dimensional photonic crystalsare, when viewed from a direction (Z-axis) perpendicular to the substrate, located in a region containing the electrode contact region and wider in the width direction than the contact region, and have a refractive index periodic structure in which the refractive index satisfies a Bragg's diffraction condition while periodically changing at every interval along the one direction (X-axis).