The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 22, 2015

Filed:

Jun. 28, 2010
Applicants:

Atsushi Okamoto, Osaka, JP;

Hiroyuki Hoshi, Osaka, JP;

Setsuo Andou, Kagoshima, JP;

Inventors:

Atsushi Okamoto, Osaka, JP;

Hiroyuki Hoshi, Osaka, JP;

Setsuo Andou, Kagoshima, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01M 4/66 (2006.01); C22C 21/00 (2006.01); C25D 1/04 (2006.01); H01G 9/008 (2006.01); H01G 11/28 (2013.01); H01G 11/68 (2013.01); H01G 11/84 (2013.01); C25D 3/66 (2006.01); C25D 3/44 (2006.01); C22B 21/00 (2006.01); H01G 11/02 (2013.01); H01G 11/04 (2013.01);
U.S. Cl.
CPC ...
H01M 4/661 (2013.01); C22C 21/00 (2013.01); C25D 1/04 (2013.01); C25D 3/44 (2013.01); C25D 3/665 (2013.01); H01G 9/016 (2013.01); H01G 11/28 (2013.01); H01G 11/68 (2013.01); H01G 11/84 (2013.01); C22B 21/0038 (2013.01); H01G 11/02 (2013.01); H01G 11/04 (2013.01); Y02E 60/13 (2013.01); Y10T 428/266 (2015.01);
Abstract

An object of the present invention is to provide a method for producing a high-ductility, high-purity aluminum foil at a high film formation rate by electrolysis using a plating solution having a low chlorine concentration. A method for producing an aluminum foil of the present invention as a means for achieving the object is characterized in that an aluminum film is formed on a surface of a substrate by electrolysis using a plating solution at least containing (1) a dialkyl sulfone, (2) an aluminum halide, and (3) at least one nitrogen-containing compound selected from the group consisting of an ammonium halide, a hydrogen halide salt of a primary amine, a hydrogen halide salt of a secondary amine, a hydrogen halide salt of a tertiary amine, and a quaternary ammonium salt represented by a general formula: RRRRN.X (wherein Rto Rindependently represent an alkyl group and X represents a counteranion for the quaternary ammonium cation), and then the film is removed from the substrate.


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