The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2015
Filed:
Mar. 27, 2013
Applicant:
The University of Utah Research Foundation, Salt Lake City, UT (US);
Inventors:
Jing Shi, Salt Lake City, UT (US);
Valy Vardeny, Salt Lake City, UT (US);
Assignee:
THE UNIVERSITY OF UTAH RESEARCH FOUNDATION, Salt Lake City, UT (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/10 (2006.01); G01R 33/09 (2006.01); B82Y 10/00 (2011.01); B82Y 25/00 (2011.01); G11B 5/29 (2006.01); G11B 5/31 (2006.01); G11C 11/16 (2006.01); H01F 10/00 (2006.01); H01F 10/32 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01); G11B 5/39 (2006.01); H01F 10/193 (2006.01);
U.S. Cl.
CPC ...
H01L 43/10 (2013.01); B82Y 10/00 (2013.01); B82Y 25/00 (2013.01); G01R 33/091 (2013.01); G11B 5/29 (2013.01); G11B 5/31 (2013.01); G11C 11/16 (2013.01); H01F 10/005 (2013.01); H01F 10/3213 (2013.01); H01F 10/3254 (2013.01); H01F 10/3268 (2013.01); H01F 10/3281 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01); G11B 5/3906 (2013.01); H01F 10/1936 (2013.01); Y10T 428/1107 (2015.01);
Abstract
The spacer in a spin-valve is replaced with an organic layer, allowing for numerous applications, including light-emitting structures. The invention demonstrates that the spin coherence of the organic material is sufficiently long that the carriers do not lose their spin memory even in traversing a thicker passive barrier. At least three methods to fabricate the organic spin-valve devices are disclosed, in which the difficulties associated with depositing the ferromagnetic (FM) and organic layers are addressed.