The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2015
Filed:
Mar. 26, 2014
Applicant:
The Regents of the University of California, Oakland, CA (US);
Inventors:
Peidong Yang, El Cerrito, CA (US);
Arunava Majumdar, Orinda, CA (US);
Allon I. Hochbaum, Berkeley, CA (US);
Renkun Chen, Berkeley, CA (US);
Raul Diaz Delgado, Berkeley, CA (US);
Assignee:
The Regents of The University of California, Oakland, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 35/28 (2006.01); H01L 35/26 (2006.01); H01L 35/22 (2006.01); H01L 35/32 (2006.01);
U.S. Cl.
CPC ...
H01L 35/26 (2013.01); H01L 35/22 (2013.01); H01L 35/32 (2013.01);
Abstract
The invention provides for a nanostructure, or an array of such nanostructures, each comprising a rough surface, and a doped or undoped semiconductor. The nanostructure is an one-dimensional (1-D) nanostructure, such a nanowire, or a two-dimensional (2-D) nanostructure. The nanostructure can be placed between two electrodes and used for thermoelectric power generation or thermoelectric cooling.