The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 22, 2015

Filed:

Sep. 12, 2014
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

Il-Soo Kim, Gyeonggi-do, KR;

SeoYoon Lee, Gyeonggi-do, KR;

Seong Kyong Park, Gyeonggi-do, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05B 33/02 (2006.01); H05B 33/10 (2006.01); H05B 33/14 (2006.01); H01L 33/18 (2010.01); H01L 33/08 (2010.01); H01L 33/32 (2010.01); H01L 33/42 (2010.01); G02F 1/1335 (2006.01); H01L 33/00 (2010.01); H01L 33/50 (2010.01);
U.S. Cl.
CPC ...
H01L 33/18 (2013.01); H01L 33/08 (2013.01); G02F 1/133606 (2013.01); G02F 2001/133614 (2013.01); G02F 2202/108 (2013.01); H01L 33/007 (2013.01); H01L 33/32 (2013.01); H01L 33/42 (2013.01); H01L 33/505 (2013.01); H01L 2933/0041 (2013.01);
Abstract

A columnar light emitting device is provided. The columnar light emitting device includes an upper transparent electrode layer, a lower transparent electrode layer disposed to be separated from the upper transparent electrode layer, a columnar light emitting structure pattern-formed between the upper transparent electrode layer and the lower transparent electrode layer, a fluorescent part formed between a plurality of the columnar light emitting structures, a P-type electrode pad formed on the upper transparent electrode layer, and an N-type electrode pad formed under the lower transparent electrode layer. The columnar light emitting structure includes a U-GaN layer, an N-type semiconductor layer, an emission layer, and a P-type semiconductor layer.


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