The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2015
Filed:
Oct. 13, 2010
Anthony John Bennett, Cambridge, GB;
Martin Brian Ward, Cambridge, GB;
Andrew James Shields, Cambridge, GB;
Anthony John Bennett, Cambridge, GB;
Martin Brian Ward, Cambridge, GB;
Andrew James Shields, Cambridge, GB;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A photon source comprising a semiconductor heterostructure, said semiconductor heterostructure comprising a quantum well, a barrier region adjacent said quantum well and a quantum dot provided in said quantum well, the photon source further comprising electrical contacts and a power supply coupled to first and second electrical contacts configured to apply a tuneable electric field across said quantum dot to control the emission energy of said quantum dot, said electric field being tuneable across an operating range an wherein the tunneling time of carriers from said quantum dot to said first electrical contact and the tunneling time of carriers from said quantum dot to said second electrical contact are greater than the radiative decay time of an exciton in said quantum dot over said operating range for controlling the emission energy, said photon source being configured such that emission from a single quantum dot exits said photon source.