The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2015
Filed:
Sep. 09, 2014
Applicant:
Advanced Optoelectronic Technology, Inc., Hsinchu Hsien 303, TW;
Inventors:
Ching-Hsueh Chiu, Hsinchu, TW;
Ya-Wen Lin, Hsinchu, TW;
Po-Min Tu, Hsinchu, TW;
Shih-Cheng Huang, Hsinchu, TW;
Assignee:
ADVANCED OPTOELECTRONIC TECHNOLOGY, INC., Hsinchu Hien, TW;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/08 (2010.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/18 (2010.01); H01L 33/32 (2010.01); H01L 33/20 (2010.01); H01L 33/42 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0075 (2013.01); H01L 33/0095 (2013.01); H01L 33/06 (2013.01); H01L 33/18 (2013.01); H01L 33/08 (2013.01); H01L 33/20 (2013.01); H01L 33/32 (2013.01); H01L 33/42 (2013.01); H01L 2933/0083 (2013.01);
Abstract
A single photon source die includes a first semiconductor layer, a plurality of columnar structures formed on the first semiconductor layer, a second semiconductor layer formed on the columnar structures. Each columnar structure includes a bottom layer, a single photon point layer and a connecting layer. The single photon point layer includes a plurality of single photon points.