The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 22, 2015

Filed:

May. 02, 2014
Applicants:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Cnrs, Paris, FR;

Inventors:

Jean-Michel Gerard, Saint Martin d'Uriage, FR;

Julien Claudon, Saint Martin le Vinoux, FR;

Philippe Lalanne, Palaiseau, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); H01L 33/06 (2010.01); H01L 33/10 (2010.01); H01L 33/60 (2010.01); H01L 33/18 (2010.01); H01L 33/24 (2010.01); H01L 33/46 (2010.01); H01L 31/18 (2006.01); H01L 33/00 (2010.01); H01L 31/056 (2014.01); H01L 33/08 (2010.01);
U.S. Cl.
CPC ...
H01L 31/035227 (2013.01); H01L 31/056 (2014.12); H01L 31/18 (2013.01); H01L 33/005 (2013.01); H01L 33/06 (2013.01); H01L 33/18 (2013.01); H01L 33/24 (2013.01); H01L 33/46 (2013.01); H01L 33/08 (2013.01); H01L 33/10 (2013.01);
Abstract

The optoelectronic arrangement comprises a semiconductor nanowire intended to participate in the processing, notably in a reception and/or an emission, of a light concerned and a mirror reflecting the light concerned. The semiconductor nanowire comprises a first section and a second section, and the mirror surrounds, at least longitudinally, the first section of the semiconductor nanowire, said second section extending out of the mirror.


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