The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 22, 2015

Filed:

Oct. 29, 2014
Applicant:

Pfc Device Holdings Ltd, Chai Wan, HK;

Inventors:

Kou-Liang Chao, New Taipei, TW;

Mei-Ling Chen, New Taipei, TW;

Tse-Chuan Su, New Taipei, TW;

Hung-Hsin Kuo, New Taipei, TW;

Assignee:

PFC DEVICE HOLDINGS LTD, Chai Wan, HK;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/47 (2006.01); H01L 29/872 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/872 (2013.01); H01L 29/402 (2013.01); H01L 29/66143 (2013.01);
Abstract

A trench Schottky rectifier device includes a substrate having a first conductivity type, a plurality of trenches formed in the substrate, and an insulating layer formed on sidewalls of the trenches. The trenches are filled with conductive structure. There is an electrode overlying the conductive structure and the substrate, and thus a Schottky contact forms between the electrode and the substrate. A plurality of embedded doped regions having a second conductivity type are formed in the substrate and located under the trenches. Each doped region and the substrate form a PN junction to pinch off current flowing toward the Schottky contact so as to suppress current leakage.


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