The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2015
Filed:
Sep. 12, 2013
Applicant:
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Inventors:
Assignee:
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/732 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/739 (2006.01); H01L 29/417 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78 (2013.01); H01L 29/0623 (2013.01); H01L 29/0634 (2013.01); H01L 29/0646 (2013.01); H01L 29/0873 (2013.01); H01L 29/66477 (2013.01); H01L 29/66712 (2013.01); H01L 29/66734 (2013.01); H01L 29/7397 (2013.01); H01L 29/7802 (2013.01); H01L 29/7813 (2013.01); H01L 29/7827 (2013.01); H01L 29/0649 (2013.01); H01L 29/0878 (2013.01); H01L 29/1095 (2013.01); H01L 29/41766 (2013.01);
Abstract
In one embodiment, a semiconductor device has a superjunction structure formed adjoining a low-doped n-type region. A low-doped p-type region is formed adjoining the superjunction structure above the low-doped n-type region and is configured to improve Eas characteristics. A body region is formed adjacent the low-doped p-type region and a control electrode structure is formed adjacent the body region for controlling a channel region within the body region.