The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2015
Filed:
Feb. 11, 2014
Seoul Semiconductor Co., Ltd., Ansan-si, KR;
Motonobu Takeya, Ansan-si, KR;
Kwan Hyun Lee, Ansan-si, KR;
June Sik Kwak, Ansan-si, KR;
Young Do Jong, Ansan-si, KR;
Kang Nyung Lee, Ansan-si, KR;
Seoul Semiconductor Co., Ltd., Ansan-si, KR;
Abstract
A vertical gallium nitride transistor according to an exemplary embodiment of the present invention includes a semiconductor structure including a first semiconductor layer of a first conductivity-type having a first surface and sidewalls, a second semiconductor layer of the first conductivity-type surrounding the first surface and the sidewalls of the first semiconductor layer, and a third semiconductor layer of a second conductivity-type disposed between the first semiconductor layer and the second semiconductor layer, the third semiconductor layer separating the first and second semiconductor layers from each other.