The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2015
Filed:
Sep. 20, 2013
Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;
Masayuki Tajiri, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;
Abstract
Provided is a switching element that is hardly destroyed even under a high bias condition in an off state because an electric field near a gate electrode is relaxed. A switching elementincludes a carrier transit layer, a carrier supply layerformed on an upper surface of the carrier transit layer, having a wider bandgap than the carrier transit layer, and forming a heterojunction with the carrier transit layer, a source electrode, a drain electrode, and a gate electrodearranged between the source electrodeand the drain electrode. An impurity-doped layeris interposed between the carrier transit layerand the drain electrode. The impurity-doped layeris formed as a semiconductor layer by heavily doping an impurity having the same conductivity type as a carrier constituting a two-dimensional carrier gas layergenerated due to the heterojunction, and a depletion layeris formed in the impurity-doped layerwhen the switching elementis in the off state, and thereby a high electric field generated near the gate electrodeis dispersed.