The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2015
Filed:
Sep. 05, 2012
Yasuyuki Kobayashi, Atsugi, JP;
Kazuhide Kumakura, Atsugi, JP;
Tetsuya Akasaka, Atsugi, JP;
Toshiki Makimoto, Atsugi, JP;
Yasuyuki Kobayashi, Atsugi, JP;
Kazuhide Kumakura, Atsugi, JP;
Tetsuya Akasaka, Atsugi, JP;
Toshiki Makimoto, Atsugi, JP;
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Abstract
A nitride semiconductor structure of the present invention is obtained by growing an h- or t-BN thin film () and a wurtzite-structure AlGaN (x>0) thin film () as buffer layers and forming a single-crystal wurtzite-structure AlGaInBN thin film () thereon. While GaN, AlGaN, AlN, and the like have the wurtzite structure with spbonds, h-BN or t-BN has the graphite structure with spbonds, and has a completely different crystal structure. Accordingly, it has heretofore not been considered that a wurtzite-structure AlGaInBN thin film can be grown on a graphite-structure h-BN thin film. However, when a wurtzite-structure AlGaN (x>0) thin film () is formed as a buffer layer on a graphite-structure boron nitride thin film (), a wurtzite-structure AlGaInBN () nitride semiconductor structure such as GaN can be grown on the buffer layer.