The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2015
Filed:
Jul. 10, 2013
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Inventor:
Yoshitaka Egawa, Kanagawa, JP;
Assignee:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0232 (2014.01); H01L 27/148 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14806 (2013.01); H01L 27/1464 (2013.01); H01L 27/14603 (2013.01); H01L 27/14612 (2013.01); H01L 27/14641 (2013.01);
Abstract
According to one embodiment, a photoelectric converting layer, a charge accumulating layer, and a light collecting unit are provided. The photoelectric converting layer is formed at a back surface side of a semiconductor substrate. The charge accumulating layer is formed at a front surface side of the semiconductor substrate, and accumulates charges photoelectric-converted by the photoelectric converting layer. The light collecting unit makes light incident to the back surface side of the semiconductor substrate to be collected on the photoelectric converting layer not to be incident to the charge accumulating layer.