The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 22, 2015

Filed:

Sep. 18, 2014
Applicants:

Stmicroelectronics SA, Montrouge, FR;

Stmicroelectronics (Crolles 2) Sas, Crolles, FR;

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Michel Marty, Sain Paul D Varces, FR;

Sebastien Jouan, Crolles, FR;

Laurent Frey, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 29/49 (2006.01); H01L 31/107 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14645 (2013.01); H01L 27/14614 (2013.01); H01L 27/14621 (2013.01); H01L 27/14636 (2013.01); H01L 27/14649 (2013.01); H01L 27/14685 (2013.01); H01L 27/14689 (2013.01); H01L 29/4916 (2013.01); H01L 31/107 (2013.01);
Abstract

An integrated circuit includes a substrate and an interconnect part above the substrate, and further includes a photosensitive region in the substrate. A filter is provided aligned with the photosensitive region. The filter is formed by at least one layer of filter material. In one implementation for front side illumination, the layer of filter material is positioned above the photosensitive region between the interconnect part and the substrate. In another implementation for back side illumination, the layer of filter material is positioned below the photosensitive region opposite the interconnect part. The layer of filter material is configured such that a product of the thickness of the layer of filter material and the imaginary part of the refractive index of the layer of filter material is above 1 nm.


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