The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 22, 2015

Filed:

Mar. 03, 2015
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventor:

Hideki Inokuma, Yokkaichi Mie, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 27/115 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1157 (2013.01); H01L 23/528 (2013.01); H01L 23/5329 (2013.01); H01L 23/53266 (2013.01); H01L 27/11524 (2013.01);
Abstract

A semiconductor device includes a substrate, a plurality of element regions that are partitioned in a line-and-space shape and extend in a first direction in the substrate, a plurality of selection gates that are formed on the substrate to extend in a second direction intersecting the first direction. In addition, the semiconductor device includes a contact region that includes a plurality of contact plugs which are provided between two selection gates adjacent to each other and are connected to the respective element regions in the substrate. Further, the contact plug includes an upper portion and a lower portion. The upper portion has a first width and is formed of a first conductive film and a second conductive film. The lower portion has a second width smaller than the first width and is formed of the first conductive film.


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