The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2015
Filed:
Mar. 25, 2014
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventors:
Ki Lyoung Lee, Hwaseong-si, KR;
Cheol Kyu Bok, Icheon-si, KR;
Keun Do Ban, Yongin-si, KR;
Jung Gun Heo, Icheon-si, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/36 (2006.01); H01L 21/308 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 21/308 (2013.01); H01L 21/0337 (2013.01);
Abstract
A method for manufacturing a semiconductor device includes forming an etch-target layer over a semiconductor substrate having a lower structure, forming a first mask pattern over the etch-target layer, forming a spacer material layer with a uniform thickness over the etch-target layer including the first mask pattern, forming a second mask pattern on an indented region of the space material layer, and etching the etch-target layer with the first mask pattern and the second mask pattern as an etch mask to form a fine pattern.