The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2015
Filed:
Oct. 29, 2013
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Gul B. Basim, Mountain View, CA (US);
Scott R. Summerfelt, Garland, TX (US);
Ted S. Moise, Dallas, TX (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3003 (2013.01); H01L 21/0217 (2013.01); H01L 21/02274 (2013.01); H01L 21/76829 (2013.01); H01L 21/76832 (2013.01); H01L 29/6659 (2013.01); H01L 29/7833 (2013.01);
Abstract
An integrated circuit with a passivation trapping layer. An integrated circuit with a hydrogen or deuterium releasing layer underlying a passivation trapping layer. Method for forming an integrated circuit having a hydrogen or deuterium releasing layer. Method for forming an integrated circuit having a passivation trapping layer.