The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 22, 2015

Filed:

Jan. 16, 2015
Applicant:

Phononic Devices, Inc., Durham, NC (US);

Inventors:

Jason D. Reed, Chapel Hill, NC (US);

Jaime A. Rumsey, Holly Springs, NC (US);

Ronald R. Hess, Oak Ridge, NC (US);

Arthur Prejs, Cary, NC (US);

Ian Patrick Wellenius, Raleigh, NC (US);

Allen L. Gray, Holly Springs, NC (US);

Assignee:

Phononic Devices, Inc., Durham, NC (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0224 (2006.01); H01L 21/44 (2006.01); H01L 21/283 (2006.01); H01L 35/02 (2006.01); H01L 35/34 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 31/0236 (2006.01); H01L 33/22 (2010.01); C23C 28/02 (2006.01); H01L 35/16 (2006.01);
U.S. Cl.
CPC ...
H01L 21/283 (2013.01); C23C 28/021 (2013.01); C23C 28/023 (2013.01); H01L 21/02562 (2013.01); H01L 29/66068 (2013.01); H01L 31/02363 (2013.01); H01L 31/022425 (2013.01); H01L 31/022458 (2013.01); H01L 33/22 (2013.01); H01L 35/02 (2013.01); H01L 35/16 (2013.01); H01L 35/34 (2013.01);
Abstract

Embodiments of a low resistivity ohmic contact are disclosed. In some embodiments, a method of fabricating a low resistivity ohmic contact includes providing a semiconductor material layer and intentionally roughening the semiconductor material layer to create a characteristic surface roughness. The method also includes providing an ohmic contact metal layer on a surface of the semiconductor material layer and providing a diffusion barrier metal layer on a surface of the ohmic contact metal layer opposite the semiconductor material layer. In this way, the adhesive force between the semiconductor material layer and the ohmic contact metal layer may be increased.


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