The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2015
Filed:
Aug. 30, 2013
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Seok-Jun Won, Seoul, KR;
Weon-Hong Kim, Gyeonggi-do, KR;
Moon-Kyun Song, Gyeonggi-do, KR;
Hyung-Suk Jung, Gyeonggi-do, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/4763 (2006.01); H01L 21/28 (2006.01); H01L 29/51 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 27/11 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28185 (2013.01); H01L 21/82345 (2013.01); H01L 21/823842 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01); H01L 27/1104 (2013.01); H01L 29/4966 (2013.01); H01L 29/66545 (2013.01);
Abstract
A fabricating method of a semiconductor device includes stacking a high-k dielectric film not containing silicon (Si) and an insulating film containing silicon (Si) on a substrate, and diffusing Si contained in the insulating film into the high-k dielectric film by annealing the substrate having the high-k dielectric film and the insulating film stacked thereon.