The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2015
Filed:
Nov. 29, 2011
Applicant:
Kenichirou Nishida, Hyogo, JP;
Inventor:
Kenichirou Nishida, Hyogo, JP;
Assignee:
JOLED INC, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/02 (2006.01); H01L 21/268 (2006.01); H01L 29/66 (2006.01); H01L 29/04 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02683 (2013.01); H01L 21/02422 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/02595 (2013.01); H01L 21/02691 (2013.01); H01L 21/268 (2013.01); H01L 27/1285 (2013.01); H01L 29/04 (2013.01); H01L 29/66757 (2013.01); H01L 29/66765 (2013.01);
Abstract
A method for forming the crystalline thin film according to an implementation of the present invention includes: preparing a substrate; forming a non-crystalline thin film above the substrate; and crystallizing at least a predetermined region in the non-crystalline thin film, by irradiating the non-crystalline thin film with a laser beam having a predetermined wavelength and scanned relative to the substrate. In the preparing, a direction of a largest residual stress on the substrate is identified. In the crystallizing, the laser beam is scanned in the identified direction of the largest residual stress.