The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2015
Filed:
Sep. 27, 2011
Yohei Yamazawa, Nirasaki, JP;
Yohei Yamazawa, Nirasaki, JP;
TOYKO ELECTRON LIMITED, Tokyo, JP;
Abstract
There is provided an inductively coupled plasma processing apparatus capable of reducing a RF power loss within a high frequency power supply unit (particularly, a matching unit) and capable of enhancing a plasma generation efficiency. In this inductively coupled plasma processing apparatus, a multiple number of closed-loop secondary circuitsindependent from each other are formed between a coaxial antenna groupand a transformer. Further, by varying electrostatic capacitances of variable capacitorsand, secondary currents Iand Iflowing through an inner antennaand an outer antenna, respectively, of the coaxial antenna groupare independently controlled. Accordingly, it is possible to readily control a plasma density distribution on a semiconductor wafer W in a diametrical direction.