The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 22, 2015

Filed:

Jul. 02, 2013
Applicant:

Sandisk Technologies Inc., Plano, TX (US);

Inventors:

Chris Nga Yee Avila, Saratoga, CA (US);

Gautam Ashok Dusija, Milpitas, CA (US);

Jian Chen, Menlo Park, CA (US);

Mrinal Kochar, San Jose, CA (US);

Abhijeet Manohar, Karnataka, IN;

Assignee:

SanDisk Technologies Inc., Plano, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/00 (2006.01); G06F 11/10 (2006.01); G06F 12/02 (2006.01); G11C 29/52 (2006.01); G11C 11/56 (2006.01); G11C 16/34 (2006.01); G11C 29/04 (2006.01);
U.S. Cl.
CPC ...
G06F 11/1072 (2013.01); G06F 12/0246 (2013.01); G11C 11/5628 (2013.01); G11C 16/3418 (2013.01); G11C 29/52 (2013.01); G06F 2212/7209 (2013.01); G11C 2029/0411 (2013.01); G11C 2211/5641 (2013.01);
Abstract

Data that is stored in a higher error rate format in a nonvolatile memory is backed up in a lower error rate format. Data to be stored may be transferred once to on-chip data latches where it is maintained while it is programmed in both the high error rate format and the low error rate format without being resent to the nonvolatile memory.


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