The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 22, 2015

Filed:

Nov. 11, 2011
Applicants:

Stephen K. Jones, Northampton, GB;

Peter J. Williams, East Hunsbury, GB;

Inventors:

Stephen K. Jones, Northampton, GB;

Peter J. Williams, East Hunsbury, GB;

Assignee:

OCLARO TECHNOLOGY LIMITED, Northamptonshire, GB;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/136 (2006.01); G02B 6/28 (2006.01); G02B 6/122 (2006.01); G02B 6/14 (2006.01); H01L 21/306 (2006.01); G02B 6/12 (2006.01); G02B 6/125 (2006.01);
U.S. Cl.
CPC ...
G02B 6/136 (2013.01); G02B 6/122 (2013.01); G02B 6/14 (2013.01); G02B 6/2813 (2013.01); H01L 21/306 (2013.01); G02B 6/125 (2013.01); G02B 2006/12097 (2013.01);
Abstract

An optical waveguide arrangement is provided which comprises an active ridge waveguide structureformed by etching of a semiconductor substrate. There is also provided an auxiliary waveguide-like structureformed on the substrate adjacent the active ridge waveguide structureto control the etched profile of the active waveguide structure. The arrangement of the auxiliary structureon the substrate controls the etched profile over the cross-section of the active waveguide structureand along the length of the active waveguide structure. Advantageously, this arrangement reduces or eliminates the disadvantages associated with etch-process induced asymmetries in the shape of closely spaced waveguides.


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