The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2015
Filed:
Apr. 20, 2012
Kouya Oohira, Mie, JP;
Masaki Nakanishi, Mie, JP;
Yosuke Taguchi, Mie, JP;
Setsuo Nakao, Aichi, JP;
NTN CORPORATION, Osaka, JP;
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, Tokyo, JP;
Abstract
The present invention provides a film formation method capable of forming a favorable amorphous carbon film under a low vacuum by using a bipolar-type PBII apparatus and the amorphous carbon film to be produced by the film formation method. The film formation method is carried out to form the amorphous carbon film under a low vacuum (1000 to 30000 Pa) by using a power source for the bipolar-type PBII apparatus. There are provided inside a chamber () a power source side electrode () connected to a power source () for the PBII apparatus and a grounding side electrode () opposed to the power source side electrode (). A base material () is disposed on one of the power source side electrode () and the grounding side electrode (). Plasma of a noble gas and that of a hydrocarbon-based gas are generated between the base material () and the electrode where the base material () is not disposed to form the amorphous carbon film on a surface of the base material ().