The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 15, 2015

Filed:

Nov. 09, 2012
Applicant:

Panasonic Corporation, Kadoma-shi, Osaka, JP;

Inventor:

Toshiyuki Okajima, Shiga, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/04 (2006.01); H03F 3/213 (2006.01); H03F 1/02 (2006.01); H03F 1/52 (2006.01); H03F 3/193 (2006.01); H03F 3/24 (2006.01); H03F 3/72 (2006.01); H03F 3/195 (2006.01);
U.S. Cl.
CPC ...
H03F 3/213 (2013.01); H03F 1/0261 (2013.01); H03F 1/523 (2013.01); H03F 3/193 (2013.01); H03F 3/195 (2013.01); H03F 3/245 (2013.01); H03F 3/72 (2013.01); H03F 2200/108 (2013.01); H03F 2200/15 (2013.01); H03F 2200/18 (2013.01); H03F 2200/181 (2013.01); H03F 2200/451 (2013.01); H03F 2200/471 (2013.01); H03F 2200/555 (2013.01); H03F 2203/7206 (2013.01); H03F 2203/7221 (2013.01); H03F 2203/7227 (2013.01);
Abstract

A high-output electric power amplifier using a depression-type FET includes a drain voltage supply portion adapted to create a positive voltage to be applied to a drain terminal in the depression-type FET, and a gate bias voltage supply portion adapted to create a negative voltage to be applied to a gate terminal in the depression-type FET, wherein the drain voltage supply portion uses an external commercial power supply as an electric power source, and the gate bias voltage supply portion uses a battery as an electric power source, in order to certainly prevent breakdowns of the FET due to excessive electric currents.


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