The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2015
Filed:
Aug. 27, 2013
Triquint Semiconductor, Inc., Hillsboro, OR (US);
Sifen Luo, Potomac, MD (US);
Kerry Burger, Summerfield, NC (US);
George Nohra, Marlborough, MA (US);
TriQuint Semiconductor, Inc., Hillsboro, OR (US);
Abstract
Various embodiments provide a bias circuit for a radio frequency (RF) power amplifier (PA) to provide a direct current (DC) bias voltage, with bias boosting, to the RF PA. The bias circuit may include a bias transistor that forms a current mirror with an amplifier transistor of the RF PA. The bias circuit may further include a first resistor coupled between the gate terminal and the drain terminal of the bias transistor to block RF signals from the gate terminal of the bias transistor. The bias circuit may further include a second resistor coupled between the drain terminal of the bias transistor and the RF PA (e.g., the gate terminal of the amplifier transistor). An amount of bias boosting of the DC bias voltage provided by the bias circuit may be based on an impedance value of the second resistor.